2 MeV Si ion implantation damage in relaxed Si1- xGex

C. O'Raifeartaigh; R.C. Barklie; A. Nylandsted Larsen; F. Priolo; G. Franzó; G. Lulli; M. Bianconi; J.K.N. Lindner; F. Cristiano; P.L.F. Hemment

doi:10.1016/S0168-583X(96)00501-0

2 MeV Si ion implantation damage in relaxed Si1- xGex

C. O'Raifeartaigh, R.C. Barklie, A. Nylandsted Larsen, F. Priolo, G. Franzó, G. Lulli, M. Bianconi, J.K.N. Lindner, F. Cristiano, P.L.F. Hemment

Department of Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	165-168
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	120
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(96)00501-0
Publication status	Published - 1996

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O'Raifeartaigh, C., Barklie, R. C., Nylandsted Larsen, A., Priolo, F., Franzó, G., Lulli, G., Bianconi, M., Lindner, J. K. N., Cristiano, F., & Hemment, P. L. F. (1996). 2 MeV Si ion implantation damage in relaxed Si1- xGex. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 120(1-4), 165-168. https://doi.org/10.1016/S0168-583X(96)00501-0

O'Raifeartaigh, C. ; Barklie, R.C. ; Nylandsted Larsen, A. ; Priolo, F. ; Franzó, G. ; Lulli, G. ; Bianconi, M. ; Lindner, J.K.N. ; Cristiano, F. ; Hemment, P.L.F. / 2 MeV Si ion implantation damage in relaxed Si1- xGex. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1996 ; Vol. 120, No. 1-4. pp. 165-168.

@article{fe26a093c76444eaa71f371080e3d8d1,

title = "2 MeV Si ion implantation damage in relaxed Si1- xGex",

author = "C. O'Raifeartaigh and R.C. Barklie and {Nylandsted Larsen}, A. and F. Priolo and G. Franz{\'o} and G. Lulli and M. Bianconi and J.K.N. Lindner and F. Cristiano and P.L.F. Hemment",

year = "1996",

doi = "10.1016/S0168-583X(96)00501-0",

language = "Undefined/Unknown",

volume = "120",

pages = "165--168",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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O'Raifeartaigh, C, Barklie, RC, Nylandsted Larsen, A, Priolo, F, Franzó, G, Lulli, G, Bianconi, M, Lindner, JKN, Cristiano, F & Hemment, PLF 1996, '2 MeV Si ion implantation damage in relaxed Si1- xGex', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 120, no. 1-4, pp. 165-168. https://doi.org/10.1016/S0168-583X(96)00501-0

2 MeV Si ion implantation damage in relaxed Si1- xGex. / O'Raifeartaigh, C.; Barklie, R.C.; Nylandsted Larsen, A.; Priolo, F.; Franzó, G.; Lulli, G.; Bianconi, M.; Lindner, J.K.N.; Cristiano, F.; Hemment, P.L.F.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 120, No. 1-4, 1996, p. 165-168.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - 2 MeV Si ion implantation damage in relaxed Si1- xGex

AU - O'Raifeartaigh, C.

AU - Barklie, R.C.

AU - Nylandsted Larsen, A.

AU - Priolo, F.

AU - Franzó, G.

AU - Lulli, G.

AU - Bianconi, M.

AU - Lindner, J.K.N.

AU - Cristiano, F.

AU - Hemment, P.L.F.

PY - 1996

Y1 - 1996

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030566455&partnerID=MN8TOARS

U2 - 10.1016/S0168-583X(96)00501-0

DO - 10.1016/S0168-583X(96)00501-0

M3 - Article

VL - 120

SP - 165

EP - 168

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -

2 MeV Si ion implantation damage in relaxed Si1- xGex

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