A 6.7-nm beyond EUV source as a future lithography source

Takamitsu Otsuka; Bowen Li; Colm O'Gorman; Thomas Cummins; Deirdre Kilbane; Takeshi Higashiguchi; Noboru Yugami; Weihua Jiang; Akira Endo; Padraig Dunne; Gerry O'Sullivan

doi:10.1117/12.916351

A 6.7-nm beyond EUV source as a future lithography source

Takamitsu Otsuka, Bowen Li, Colm O'Gorman, Thomas Cummins, Deirdre Kilbane, Takeshi Higashiguchi, Noboru Yugami, Weihua Jiang, Akira Endo, Padraig Dunne, Gerry O'Sullivan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Citations (Scopus)

Abstract

We demonstrate an efficient extreme ultraviolet (EUV) source for operation at λ?= 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2%BW), which is 1.6 times larger than the 0.33% (0.6%BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.

Original language	English
Title of host publication	Extreme Ultraviolet (EUV) Lithography III
DOIs	https://doi.org/10.1117/12.916351
Publication status	Published - 2012
Externally published	Yes
Event	Extreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States Duration: 13 Feb 2012 → 16 Feb 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8322
ISSN (Print)	0277-786X

Conference

Conference	Extreme Ultraviolet (EUV) Lithography III
Country/Territory	United States
City	San Jose, CA
Period	13/02/2012 → 16/02/2012

Keywords

Beyond extreme ultraviolet (BEUV)
Gd
Laser-produced plasmas
Rare-earth
Tb

Access to Document

10.1117/12.916351

Cite this

Otsuka, T., Li, B., O'Gorman, C., Cummins, T., Kilbane, D., Higashiguchi, T., Yugami, N., Jiang, W., Endo, A., Dunne, P., & O'Sullivan, G. (2012). A 6.7-nm beyond EUV source as a future lithography source. In Extreme Ultraviolet (EUV) Lithography III [832214] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322). https://doi.org/10.1117/12.916351

Otsuka, Takamitsu ; Li, Bowen ; O'Gorman, Colm ; Cummins, Thomas ; Kilbane, Deirdre ; Higashiguchi, Takeshi ; Yugami, Noboru ; Jiang, Weihua ; Endo, Akira ; Dunne, Padraig ; O'Sullivan, Gerry. / A 6.7-nm beyond EUV source as a future lithography source. Extreme Ultraviolet (EUV) Lithography III. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "We demonstrate an efficient extreme ultraviolet (EUV) source for operation at λ?= 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2%BW), which is 1.6 times larger than the 0.33% (0.6%BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.",

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author = "Takamitsu Otsuka and Bowen Li and Colm O'Gorman and Thomas Cummins and Deirdre Kilbane and Takeshi Higashiguchi and Noboru Yugami and Weihua Jiang and Akira Endo and Padraig Dunne and Gerry O'Sullivan",

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Otsuka, T, Li, B, O'Gorman, C, Cummins, T, Kilbane, D, Higashiguchi, T, Yugami, N, Jiang, W, Endo, A, Dunne, P & O'Sullivan, G 2012, A 6.7-nm beyond EUV source as a future lithography source. in Extreme Ultraviolet (EUV) Lithography III., 832214, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8322, Extreme Ultraviolet (EUV) Lithography III, San Jose, CA, United States, 13/02/2012. https://doi.org/10.1117/12.916351

A 6.7-nm beyond EUV source as a future lithography source. / Otsuka, Takamitsu; Li, Bowen; O'Gorman, Colm; Cummins, Thomas; Kilbane, Deirdre; Higashiguchi, Takeshi; Yugami, Noboru; Jiang, Weihua; Endo, Akira; Dunne, Padraig; O'Sullivan, Gerry.

Extreme Ultraviolet (EUV) Lithography III. 2012. 832214 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Cummins, Thomas

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AU - Higashiguchi, Takeshi

AU - Yugami, Noboru

AU - Jiang, Weihua

AU - Endo, Akira

AU - Dunne, Padraig

AU - O'Sullivan, Gerry

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AB - We demonstrate an efficient extreme ultraviolet (EUV) source for operation at λ?= 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2%BW), which is 1.6 times larger than the 0.33% (0.6%BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.

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A 6.7-nm beyond EUV source as a future lithography source

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Keywords

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