Absorption dynamics of type-II GaSb/GaAs quantum dots

K. Komolibus; T. Piwonski; C. J. Reyner; B. Liang; G. Huyet; D. L. Huffaker; E. A. Viktorov; J. Houlihan

doi:10.1364/OME.7.001424

Absorption dynamics of type-II GaSb/GaAs quantum dots

K. Komolibus, T. Piwonski, C. J. Reyner, B. Liang, G. Huyet, D. L. Huffaker, E. A. Viktorov, J. Houlihan

Department of Science

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10 Citations (Scopus)

Abstract

In this paper room temperature pump-probe spectroscopy is employed to study ultrafast absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong 3-5 ps timescale which is reproduced using a rate equation model and thereby associated with hole recapture by the QD following higher order absorption of part of the pump pulse into barrier layers. The strength of the component is attributed to cancelling effects in the gain and phase dynamics as a result of the carrier dependence of emission frequency that is characteristic of type-II structures.

Original language	English
Pages (from-to)	1424
Number of pages	1
Journal	Optical Materials Express
Volume	7
Issue number	4
DOIs	https://doi.org/10.1364/OME.7.001424
Publication status	Published - 01 Apr 2017

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abstract = "In this paper room temperature pump-probe spectroscopy is employed to study ultrafast absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong 3-5 ps timescale which is reproduced using a rate equation model and thereby associated with hole recapture by the QD following higher order absorption of part of the pump pulse into barrier layers. The strength of the component is attributed to cancelling effects in the gain and phase dynamics as a result of the carrier dependence of emission frequency that is characteristic of type-II structures.",

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AU - Komolibus, K.

AU - Piwonski, T.

AU - Reyner, C. J.

AU - Liang, B.

AU - Huyet, G.

AU - Huffaker, D. L.

AU - Viktorov, E. A.

AU - Houlihan, J.

PY - 2017/4/1

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N2 - In this paper room temperature pump-probe spectroscopy is employed to study ultrafast absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong 3-5 ps timescale which is reproduced using a rate equation model and thereby associated with hole recapture by the QD following higher order absorption of part of the pump pulse into barrier layers. The strength of the component is attributed to cancelling effects in the gain and phase dynamics as a result of the carrier dependence of emission frequency that is characteristic of type-II structures.

AB - In this paper room temperature pump-probe spectroscopy is employed to study ultrafast absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong 3-5 ps timescale which is reproduced using a rate equation model and thereby associated with hole recapture by the QD following higher order absorption of part of the pump pulse into barrier layers. The strength of the component is attributed to cancelling effects in the gain and phase dynamics as a result of the carrier dependence of emission frequency that is characteristic of type-II structures.

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SN - 2159-3930

VL - 7

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JO - Optical Materials Express

JF - Optical Materials Express

IS - 4

ER -

Absorption dynamics of type-II GaSb/GaAs quantum dots

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