Current profiling in broad-area semiconductor lasers

V. Voignier; C. Sailliot; J. Houlihan; J. R. O'Callaghan; G. Wu; G. Huyet; J. G. McInerney

doi:10.1117/12.470533

Current profiling in broad-area semiconductor lasers

V. Voignier, C. Sailliot, J. Houlihan, J. R. O'Callaghan, G. Wu, G. Huyet, J. G. McInerney

Research output: Contribution to journal › Conference article › peer-review

Abstract

We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.

Original language	English
Pages (from-to)	336-343
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4646
DOIs	https://doi.org/10.1117/12.470533
Publication status	Published - 2002
Externally published	Yes
Event	Physics and Simulation of Optoelectronic Devices X - San Jose, CA, United States Duration: 21 Jan 2002 → 25 Jan 2002

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title = "Current profiling in broad-area semiconductor lasers",

abstract = "We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.",

author = "V. Voignier and C. Sailliot and J. Houlihan and O'Callaghan, {J. R.} and G. Wu and G. Huyet and McInerney, {J. G.}",

year = "2002",

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language = "English",

volume = "4646",

pages = "336--343",

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T1 - Current profiling in broad-area semiconductor lasers

AU - Voignier, V.

AU - Sailliot, C.

AU - Houlihan, J.

AU - O'Callaghan, J. R.

AU - Wu, G.

AU - Huyet, G.

AU - McInerney, J. G.

PY - 2002

Y1 - 2002

N2 - We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.

AB - We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.

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U2 - 10.1117/12.470533

DO - 10.1117/12.470533

M3 - Conference article

AN - SCOPUS:0036030714

VL - 4646

SP - 336

EP - 343

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

Y2 - 21 January 2002 through 25 January 2002

ER -

Current profiling in broad-area semiconductor lasers

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