Dopant activation in Sb-implanted relaxed Si1- xGex alloy layers grown on compositionally graded buffers

C. O'Raifeartaigh, A.N. Larsen, F. Cristiano, P.L.F. Hemment

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	579-585
Number of pages	7
Journal	Applied Physics A Materials Science & Processing
Volume	61
Issue number	6
DOIs	https://doi.org/10.1007/BF01542867
Publication status	Published - 1995

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title = "Dopant activation in Sb-implanted relaxed Si1- xGex alloy layers grown on compositionally graded buffers",

author = "C. O'Raifeartaigh and A.N. Larsen and F. Cristiano and P.L.F. Hemment",

year = "1995",

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volume = "61",

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journal = "Applied Physics A Materials Science & Processing",

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T1 - Dopant activation in Sb-implanted relaxed Si1- xGex alloy layers grown on compositionally graded buffers

AU - O'Raifeartaigh, C.

AU - Larsen, A.N.

AU - Cristiano, F.

AU - Hemment, P.L.F.

PY - 1995

Y1 - 1995

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M3 - Article

SN - 1432-0630

VL - 61

SP - 579

EP - 585

JO - Applied Physics A Materials Science & Processing

JF - Applied Physics A Materials Science & Processing

IS - 6

ER -