Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

I. O'Driscoll; T. Piwonski; C. F. Schleussner; J. Houlihan; G. Huyet; R. J. Manning

Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

I. O'Driscoll, T. Piwonski, C. F. Schleussner, J. Houlihan, G. Huyet, R. J. Manning

Department of Science

Research output: Contribution to journal › Article › peer-review

Abstract

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics.

Original language	English
Pages (from-to)	3
Journal	Applied Physics Letters
Volume	91
Issue number	7
Publication status	Published - 2007

Keywords

MU-M NONLINEARITIES AMPLIFIERS

Access to Document

Carrier capture dynamics of InAs/GaAs quantum dotsOther version, 0 bytes
Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiersOther version, 0 bytes

Cite this

@article{4dacce5a346c455881bd7a1623d90642,

title = "Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers",

abstract = "Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics.",

keywords = "MU-M NONLINEARITIES AMPLIFIERS",

author = "I. O'Driscoll and T. Piwonski and Schleussner, {C. F.} and J. Houlihan and G. Huyet and Manning, {R. J.}",

year = "2007",

language = "English",

volume = "91",

pages = "3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

AU - O'Driscoll, I.

AU - Piwonski, T.

AU - Schleussner, C. F.

AU - Houlihan, J.

AU - Huyet, G.

AU - Manning, R. J.

PY - 2007

Y1 - 2007

N2 - Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics.

AB - Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics.

KW - MU-M NONLINEARITIES AMPLIFIERS

M3 - Article

SN - 0003-6951

VL - 91

SP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

Abstract

Keywords

Access to Document

Fingerprint

Cite this