Abstract
We analyse the properties of GaAs based quantum dot semiconductor lasers emitting near 1310 nm. The line-width enhancement factor is shown to depend strongly on device temperature, ranging from 1.5 at 20 degrees C to 5 at 50 degrees C. With optical feedback from a distant reflector, devices remained stable at 20 degrees C but displayed a range of instabilities at 50 degrees C, including irregular power drop - outs and periodic pulsations, before entering a chaotic regime. Such dynamical features are unique to quantum dot lasers - quantum well lasers are significantly more unstable under optical feedback making such a clear route to chaos difficult to observe. (c) 2006 Optical Society of America.
Original language | English |
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Pages (from-to) | 10831-10837 |
Number of pages | 7 |
Journal | Optics Express |
Volume | 14 |
Issue number | 22 |
DOIs | |
Publication status | Published - Oct 2006 |
Keywords
- Linewidth enhancement factor
- cavity
- diodes
- gain
- optical feedback
- sensitivity