A combined assault on the linear, quadratic, gaussian and lorentzian profiles to suppress filamentation and high order transverse modes of high brightness semiconductor lasers is described. A standard broad area laser and a linearly or nonlinearly flared laser in which the current stripe is shaped to overlap the spatial extent of the propagating light are used. In these devices, the desired fundamental transverse mode cannot consume carriers at the edges of the active medium, resulting in high local carrier densities which modulated the gain and index spatially and cause various instabilities. Transverse current profiles are generated by incorporating a thick current spreading layer and using standard lithography.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|Publication status||Published - 1999|
|Event||Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA|
Duration: 08 Nov 1999 → 11 Nov 1999