Improved beam quality due to current profiling in a broad area semiconductor laser

J. Houlihan, V. Voignier, J. R. O'Callaghan, G. Wu, G. Huyet, J. G. McInerney, B. Corbett

Research output: Contribution to journalConference articlepeer-review

Abstract

A mechanism for obtaining stable travelling waves in the transverse section of a semiconductor laser is presented. This is illustrated with experimental and numerical results utilizing the technique of transverse current profiling. Thus, the underlying physics of current profiling could be extended to the case of transversely coupled lasers to engineer phase locked laser arrays.

Original languageEnglish
Pages (from-to)261-269
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4947
DOIs
Publication statusPublished - 2002
Externally publishedYes
EventLasers, Diodes, Optoelectronic Devices, and Heterogenous Integration - Brugge, Belgium
Duration: 29 Oct 200231 Oct 2002

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