Intradot dynamics of InAs quantum dot based electroabsorbers

Tomasz Piwonski, Jaroslaw Pulka, Gillian Madden, Guillaume Huyet, John Houlihan, Evgeny A. Viktorov, Thomas Erneux, Paul Mandel

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.
Original languageEnglish
Article number123504
Pages (from-to)3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2009


  • Auger effect carrier relaxation time electroabsorption electro-optical devices excited states gallium arsenide ground states III-V semiconductors indium compounds nonlinear optics optical materials optical waveguides phonons semiconductor quantum dots LASERS


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