Ion implantation induced damage in relaxed Si 1-x Ge x

RC Barklie; C O'Raifeartaigh; A Nylandsted-Larsen; F Priolo; G Lulli; JJ Grob; A Mesli; JKN Lindner; F Cristiano; PLF Hemment

Ion implantation induced damage in relaxed Si 1-x Ge x

RC Barklie, C O'Raifeartaigh, A Nylandsted-Larsen, F Priolo, G Lulli, JJ Grob, A Mesli, JKN Lindner, F Cristiano, PLF Hemment

Department of Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 11th International Conference on Ion Implantation Technology
Publication status	Published - 1996

Cite this

@inproceedings{cc8fc552233444b8aefbfc04c475546c,

title = "Ion implantation induced damage in relaxed Si 1-x Ge x",

author = "RC Barklie and C O'Raifeartaigh and A Nylandsted-Larsen and F Priolo and G Lulli and JJ Grob and A Mesli and JKN Lindner and F Cristiano and PLF Hemment",

year = "1996",

language = "Undefined/Unknown",

booktitle = "Proceedings of the 11th International Conference on Ion Implantation Technology",

}

TY - GEN

T1 - Ion implantation induced damage in relaxed Si 1-x Ge x

AU - Barklie, RC

AU - O'Raifeartaigh, C

AU - Nylandsted-Larsen, A

AU - Priolo, F

AU - Lulli, G

AU - Grob, JJ

AU - Mesli, A

AU - Lindner, JKN

AU - Cristiano, F

AU - Hemment, PLF

PY - 1996

Y1 - 1996

M3 - Conference contribution

BT - Proceedings of the 11th International Conference on Ion Implantation Technology

ER -