Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

J. Muszalski; J. Houlihan; G. Huyet; B. Corbett

doi:10.1049/el:20040270

Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

J. Muszalski, J. Houlihan, G. Huyet, B. Corbett

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

Original language	English
Pages (from-to)	428-430
Number of pages	3
Journal	Electronics Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1049/el:20040270
Publication status	Published - 01 Apr 2004
Externally published	Yes

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10.1049/el:20040270

http://repository.wit.ie/id/document/2430

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title = "Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm",

abstract = "Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.",

author = "J. Muszalski and J. Houlihan and G. Huyet and B. Corbett",

year = "2004",

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T1 - Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

AU - Muszalski, J.

AU - Houlihan, J.

AU - Huyet, G.

AU - Corbett, B.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

AB - Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

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U2 - 10.1049/el:20040270

DO - 10.1049/el:20040270

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VL - 40

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EP - 430

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

Abstract

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