MeV ion implantation induced damage in relaxed Si 1- x Ge x

A Nylandsted Larsen; C O’Raifeartaigh; RC Barklie; B Holm; F Priolo; G Franzo; G Lulli; M Bianconi; R Nipoti; JKN Lindner

MeV ion implantation induced damage in relaxed Si 1- x Ge x

A Nylandsted Larsen, C O’Raifeartaigh, RC Barklie, B Holm, F Priolo, G Franzo, G Lulli, M Bianconi, R Nipoti, JKN Lindner

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	2208-2218
Number of pages	11
Journal	Journal of Applied Physics
Volume	81
Issue number	5
Publication status	Published - 1997
Externally published	Yes

Cite this

@article{396045e577aa4179bae2742bbc8cd99d,

title = "MeV ion implantation induced damage in relaxed Si 1- x Ge x",

author = "{Nylandsted Larsen}, A and C O{\textquoteright}Raifeartaigh and RC Barklie and B Holm and F Priolo and G Franzo and G Lulli and M Bianconi and R Nipoti and JKN Lindner",

year = "1997",

language = "Undefined/Unknown",

volume = "81",

pages = "2208--2218",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - MeV ion implantation induced damage in relaxed Si 1- x Ge x

AU - Nylandsted Larsen, A

AU - O’Raifeartaigh, C

AU - Barklie, RC

AU - Holm, B

AU - Priolo, F

AU - Franzo, G

AU - Lulli, G

AU - Bianconi, M

AU - Nipoti, R

AU - Lindner, JKN

PY - 1997

Y1 - 1997

M3 - Article

VL - 81

SP - 2208

EP - 2218

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -