MeV ion implantation induced damage in relaxed Si1-xGex

A. Nylandsted Larsen; C. O'Raifeartaigh; R.C. Barklie; B. Holm; F. Priolo; G. Franzo; G. Lulli; M. Bianconi; R. Nipoti; J.K.N. Lindner; A. Mesli; J.J. Grob; F. Cristiano; P.L.F. Hemment

doi:10.1063/1.364288

MeV ion implantation induced damage in relaxed Si1-xGex

A. Nylandsted Larsen, C. O'Raifeartaigh, R.C. Barklie, B. Holm, F. Priolo, G. Franzo, G. Lulli, M. Bianconi, R. Nipoti, J.K.N. Lindner, A. Mesli, J.J. Grob, F. Cristiano, P.L.F. Hemment

Department of Science

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Original language	Undefined/Unknown
Journal	Journal of Applied Physics
DOIs	https://doi.org/10.1063/1.364288
Publication status	Published - 1997

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10.1063/1.364288

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@article{74d56b65ef6049219521681feb49c09d,

title = "MeV ion implantation induced damage in relaxed Si1-xGex",

author = "{Nylandsted Larsen}, A. and C. O'Raifeartaigh and R.C. Barklie and B. Holm and F. Priolo and G. Franzo and G. Lulli and M. Bianconi and R. Nipoti and J.K.N. Lindner and A. Mesli and J.J. Grob and F. Cristiano and P.L.F. Hemment",

year = "1997",

doi = "10.1063/1.364288",

language = "Undefined/Unknown",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

}

MeV ion implantation induced damage in relaxed Si1-xGex / Nylandsted Larsen, A.; O'Raifeartaigh, C.; Barklie, R.C.; Holm, B.; Priolo, F.; Franzo, G.; Lulli, G.; Bianconi, M.; Nipoti, R.; Lindner, J.K.N.; Mesli, A.; Grob, J.J.; Cristiano, F.; Hemment, P.L.F.

In: Journal of Applied Physics, 1997.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - MeV ion implantation induced damage in relaxed Si1-xGex

AU - Nylandsted Larsen, A.

AU - O'Raifeartaigh, C.

AU - Barklie, R.C.

AU - Holm, B.

AU - Priolo, F.

AU - Franzo, G.

AU - Lulli, G.

AU - Bianconi, M.

AU - Nipoti, R.

AU - Lindner, J.K.N.

AU - Mesli, A.

AU - Grob, J.J.

AU - Cristiano, F.

AU - Hemment, P.L.F.

PY - 1997

Y1 - 1997

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0006782675&partnerID=MN8TOARS

U2 - 10.1063/1.364288

DO - 10.1063/1.364288

M3 - Article

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

ER -

MeV ion implantation induced damage in relaxed Si<sub>1-x</sub>Ge<sub>x</sub>

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