Model of formation and propagation of nanoporous structures in indium phosphide during anodisation in aqueous KOH

Michael G.M. Keyes, Nathan Quill, Andrea Bourke, Colm O'Dwyer, Clifford Nolan, Ian Clancy, D. Noel Buckley, Robert P. Lynch

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


    Porous layers are formed in highly doped (1018 cm-3) n-type InP anodised in concentrated aqueous KOH solutions. The pores have a characteristic diameter and propagate along <111>A directions. This preferential etching leads to porous regions with a characteristic tetrahedral shape. We have previously proposed a three-step mechanism of electrochemical pore formation: (1) hole generation at pore tips, (2) hole diffusion and (3) electrochemical oxidation of the semiconductor to form etch products. Step 1 determines the overall etch rate. However, if the kinetics of Step 3 are slow relative to Step 2, then etching can occur at preferred crystallographic sites leading to pore propagation in preferential directions. We have implemented the fundamental rules of this mechanism in a numerical simulation of this mechanism and we show that the simulation reproduces many of the features of pore growth in InP.

    Original languageEnglish
    Title of host publicationECS Transactions
    PublisherIOP Publishing Ltd.
    Number of pages14
    ISBN (Electronic)9781510866171, 9781510866171, 9781510866171, 9781607688280, 9781607688303, 9781607688310, 9781607688327, 9781607688334, 9781607688341, 9781607688358, 9781607688365, 9781607688372, 9781607688389, 9781607688396, 9781607688402, 9781607688419
    Publication statusPublished - 2018
    Event233rd Meeting of the Electrochemical Society - Seattle, United States
    Duration: 13 May 201817 May 2018

    Publication series

    NameECS Transactions
    ISSN (Print)1938-6737
    ISSN (Electronic)1938-5862


    Conference233rd Meeting of the Electrochemical Society
    Country/TerritoryUnited States


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