Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

I. O'Driscoll; T. Piwonski; J. Houlihan; G. Huyet; R. J. Manning; B. Corbett

Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

I. O'Driscoll, T. Piwonski, J. Houlihan, G. Huyet, R. J. Manning, B. Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.

Original language	English
Pages (from-to)	3
Journal	Applied Physics Letters
Volume	91
Issue number	26
Publication status	Published - 2007

Keywords

LINEWIDTH ENHANCEMENT FACTOR LASERS ALPHA GAIN

Access to Document

Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiersOther version, 0 bytes

http://repository.wit.ie/id/document/2400

Cite this

@article{d926c1132e14465fb096e46caa24c230,

title = "Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers",

abstract = "The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.",

keywords = "LINEWIDTH ENHANCEMENT FACTOR LASERS ALPHA GAIN",

author = "I. O'Driscoll and T. Piwonski and J. Houlihan and G. Huyet and Manning, {R. J.} and B. Corbett",

year = "2007",

language = "English",

volume = "91",

pages = "3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

AU - O'Driscoll, I.

AU - Piwonski, T.

AU - Houlihan, J.

AU - Huyet, G.

AU - Manning, R. J.

AU - Corbett, B.

PY - 2007

Y1 - 2007

N2 - The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.

AB - The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.

KW - LINEWIDTH ENHANCEMENT FACTOR LASERS ALPHA GAIN

M3 - Article

SN - 0003-6951

VL - 91

SP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -