Recovery time scales in a reversed-biased quantum dot absorber

Evgeny A. Viktorov, Thomas Erneux, Paul Mandel, Tomasz Piwonski, Gillian Madden, Jaroslaw Pulka, Guillaume Huyet, John Houlihan

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

The nonlinear recovery of quantum dot based reverse-biased waveguide absorbers is investigated both experimentally and analytically. We show that the recovery dynamics consists of a fast initial layer followed by a relatively slow decay. The fast recovery stage is completely determined by the intradot properties, while the slow stage depends on the escape from the dot to the wetting layer.
Original languageEnglish
Article number263502
Pages (from-to)3
JournalApplied Physics Letters
Volume94
Issue number26
DOIs
Publication statusPublished - 2009

Keywords

  • gallium arsenide indium compounds nonlinear optics optical fabrication optical waveguides semiconductor quantum dots wetting LOCKED SEMICONDUCTOR-LASERS

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