Source development for extreme ultraviolet lithography and water window imaging

G. O'Sullivan, P. Dunne, D. Kilbane, L. Liu, R. Lokasani, E. Long, B. W. Li, T. McCormack, F. O'Reilly, J. Shiel, E. Sokell, C. Suzuki, T. Wu, T. Higashiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Sources based on laser produced plasmas of tin (Sn) are currently being developed for extreme ultraviolet lithography for semiconductor fabrication. Since they operate at short wavelength (13.5 nm) they are capable of producing features with critical dimensions in the 10 nm range. Already next generation lithography sources operating at an even lower wavelength of around 6.7-6.8 nm have been proposed and research is ongoing on their feasibility for both large scale manufacturing and 'at wavelength' metrology. The high resolution afforded by such short wavelengths is also of use for applications such as surface patterning and microscopy and the results of recent experiments to identify sources for operation in the 'water window' (2.34-4.2 nm), where carbon absorbs strongly but water does not are summarized.

Original languageEnglish
Title of host publicationAtomic Processes in Plasmas, APiP 2016
Subtitle of host publicationProceedings of the 18th and 19th International Conference on Atomic Processes in Plasmas
EditorsDjamel Benredjem
PublisherAmerican Institute of Physics
ISBN (Electronic)9780735414792
DOIs
Publication statusPublished - 01 Mar 2017
Externally publishedYes
Event19th International Conference on Atomic Processes in Plasmas, APiP 2016 - Paris, France
Duration: 04 Apr 201608 Apr 2016

Publication series

NameAIP Conference Proceedings
Volume1811
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference19th International Conference on Atomic Processes in Plasmas, APiP 2016
Country/TerritoryFrance
CityParis
Period04/04/201608/04/2016

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