@article{1fad8826a946475381c9c19d46a96b0d,
title = "Spatial Coherence and Thermal Lensing in Broad-Area Semiconductor Lasers",
abstract = "Injection profiled broad-area edge-emitting semiconductor lasers demonstrate single transverse mode operation and near-diffraction-limited beam output when driven by pulsed pump current. Thermal effects arising from CW operation induce filamentary dynamics, thus degrading the beam. Transition from the stable nonthermal to the unstable CW regime is analyzed experimentally and numerically, and techniques to improve beam quality in the thermal regime, based on feedback or thermal profiling, are proposed.",
keywords = "Gain tailoring, High power, Semiconductor laser, Thermal lensing",
author = "O'Callaghan, {James R.} and John Houlihan and Vincent Voignier and Wu, {Guan H.} and Eamonn O'Neill and McInerney, {John G.} and Guillaume Huyet",
note = "Funding Information: Manuscript received February 28, 2003; revised August 27, 2003. This work was supported by Science Foundation Ireland under Grant SFI/01/F.1/CO13. J. R. O{\textquoteright}Callaghan and V. Voignier are with the Department of Optoelectronics, University of Ulm, D-89081 Ulm, Germany. J. Houlihan, G. H. Wu, E. O{\textquoteright}Neill, and G. Huyet are with the Physics Department, National University of Ireland, University College, Cork, Ireland. J. G. McInerney is with Novalux Inc., Sunnyvale, CA 94086 USA (e-mail: houlihan@phys.ucc.ie). Digital Object Identifier 10.1109/JQE.2003.820832 Fig. 1. Cross section of the p spreading layer device. The thick p layer allows the carriers to spread, thus smoothing the injection profile in the active region.",
year = "2004",
month = jan,
doi = "10.1109/JQE.2003.820832",
language = "English",
volume = "40",
pages = "1--9",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}