Abstract
The stability properties of injection-current profiled quantum dot lasers are analyzed for broad area devices of different length. In general, devices demonstrate stable output at low to moderate injection levels before the onset of filamentary dynamics at higher injection levels. By comparing devices of different lengths, the onset of filamentary dynamics is shown to coincide in each case with the onset of excited state lasing and so the loss in stability may be linked to the increased low frequency noise and phase-amplitude coupling that occurs in this regime.
Original language | English |
---|---|
Pages (from-to) | 1156-1161 |
Number of pages | 6 |
Journal | Optics Communications |
Volume | 281 |
Issue number | 5 |
DOIs | |
Publication status | Published - 01 Mar 2008 |
Keywords
- LINEWIDTH ENHANCEMENT FACTOR AREA SEMICONDUCTOR-LASER PATTERN-FORMATION FIELD PATTERN NEAR-FIELD GAIN FILAMENTATION