Stabilization of self-focusing instability in wide-aperture semiconductor lasers

V. Voignier, J. Houlihan, J. R. O’Callaghan, C. Sailliot, G. Huyet

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 μm p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed.

Original languageEnglish
Article number053807
Pages (from-to)538071-538075
Number of pages5
JournalPhysical Review A - Atomic, Molecular, and Optical Physics
Issue number5
Publication statusPublished - 2002
Externally publishedYes


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