Stabilization of self-focusing instability in wide-aperture semiconductor lasers

V. Voignier; J. Houlihan; J. R. O’Callaghan; C. Sailliot; G. Huyet

doi:10.1103/PhysRevA.65.053807

Stabilization of self-focusing instability in wide-aperture semiconductor lasers

V. Voignier, J. Houlihan, J. R. O’Callaghan, C. Sailliot, G. Huyet

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 μm p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed.

Original language	English
Article number	053807
Pages (from-to)	538071-538075
Number of pages	5
Journal	Physical Review A - Atomic, Molecular, and Optical Physics
Volume	65
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevA.65.053807
Publication status	Published - 2002
Externally published	Yes

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10.1103/PhysRevA.65.053807

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abstract = "A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 μm p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed.",

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AU - Sailliot, C.

AU - Huyet, G.

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AB - A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 μm p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed.

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Stabilization of self-focusing instability in wide-aperture semiconductor lasers

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