A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 μm p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed.
|Number of pages||5|
|Journal||Physical Review A - Atomic, Molecular, and Optical Physics|
|Publication status||Published - 2002|