Thermal properties and behaviour of gain profiled semiconductor lasers

E. O'Neili; J. R. O'Callaghan; J. Houlihan; V. Voignier; G. H. Wu; G. Huyet; J. G. McInerney

Thermal properties and behaviour of gain profiled semiconductor lasers

E. O'Neili, J. R. O'Callaghan, J. Houlihan, V. Voignier, G. H. Wu, G. Huyet, J. G. McInerney

Research output: Contribution to journal › Conference article › peer-review

Abstract

Gain profiled edge-emitting semiconductor lasers, exhibiting a high degree of spatial coherence, have been fabricated and analyzed. We have experimentally investigated their behaviour under pulsed and CW operation to study their thermal properties and complemented this work with numerical simulations.

Original language	English
Pages (from-to)	438-440
Number of pages	3
Journal	OSA Trends in Optics and Photonics Series
Volume	88
Publication status	Published - 2003
Externally published	Yes
Event	Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States Duration: 01 Jun 2003 → 06 Jun 2003

Cite this

@article{d2cee1f72b264e71be26c6beaca44cac,

title = "Thermal properties and behaviour of gain profiled semiconductor lasers",

abstract = "Gain profiled edge-emitting semiconductor lasers, exhibiting a high degree of spatial coherence, have been fabricated and analyzed. We have experimentally investigated their behaviour under pulsed and CW operation to study their thermal properties and complemented this work with numerical simulations.",

author = "E. O'Neili and O'Callaghan, {J. R.} and J. Houlihan and V. Voignier and Wu, {G. H.} and G. Huyet and McInerney, {J. G.}",

year = "2003",

language = "English",

volume = "88",

pages = "438--440",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "null ; Conference date: 01-06-2003 Through 06-06-2003",

}

TY - JOUR

T1 - Thermal properties and behaviour of gain profiled semiconductor lasers

AU - O'Neili, E.

AU - O'Callaghan, J. R.

AU - Houlihan, J.

AU - Voignier, V.

AU - Wu, G. H.

AU - Huyet, G.

AU - McInerney, J. G.

PY - 2003

Y1 - 2003

N2 - Gain profiled edge-emitting semiconductor lasers, exhibiting a high degree of spatial coherence, have been fabricated and analyzed. We have experimentally investigated their behaviour under pulsed and CW operation to study their thermal properties and complemented this work with numerical simulations.

AB - Gain profiled edge-emitting semiconductor lasers, exhibiting a high degree of spatial coherence, have been fabricated and analyzed. We have experimentally investigated their behaviour under pulsed and CW operation to study their thermal properties and complemented this work with numerical simulations.

UR - http://www.scopus.com/inward/record.url?scp=8744289409&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:8744289409

SN - 1094-5695

VL - 88

SP - 438

EP - 440

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

Y2 - 1 June 2003 through 6 June 2003

ER -

Thermal properties and behaviour of gain profiled semiconductor lasers

Abstract

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