Ultrafast Processes in InAs/GaAs Quantum Dot Based Electro-Absorbers

T. Piwonski; J. Pulka; G. Madden; J. Houlihan; G. Huyet; E. A. Viktorov; T. Erneux; P. Mandel

doi:10.1109/ICTON.2009.5185002

Ultrafast Processes in InAs/GaAs Quantum Dot Based Electro-Absorbers

T. Piwonski, J. Pulka, G. Madden, J. Houlihan, G. Huyet, E. A. Viktorov, T. Erneux, P. Mandel

Department of Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study we perform a detailed investigation of the ultrafast processes which govern the intradot recovery dynamics of a QD InAs/GaAs structure under reverse bias condition by means of the Single and Two Colour Pump-Probe technique. By studying the GS and ES recoveries as a function of reverse bias voltage and fitting the experimental results with a simple rate equation model for the intradot carrier dynamics we have illustrated the dominance of Auger mediated recovery when the ES is initially populated while phonon mediated recovery dominates for the GS case. This provides opportunities for the design of the next generation of electro-absorbing devices based on QD materials.

Original language	English
Title of host publication	ICTON 2009
Subtitle of host publication	11th International Conference on Transparent Optical Networks
DOIs	https://doi.org/10.1109/ICTON.2009.5185002
Publication status	Published - 2009
Event	ICTON 2009: 11th International Conference on Transparent Optical Networks - Ponta Delgada, Portugal Duration: 28 Jun 2009 → 02 Jul 2009

Publication series

Name	ICTON 2009: 11th International Conference on Transparent Optical Networks

Conference

Conference	ICTON 2009: 11th International Conference on Transparent Optical Networks
Country/Territory	Portugal
City	Ponta Delgada
Period	28/06/2009 → 02/07/2009

Keywords

Absorption recovery dynamics
Pump-probe spectroscopy
Quantum dot
Semiconductor electro-absorbers

Access to Document

10.1109/ICTON.2009.5185002

Cite this

Piwonski, T., Pulka, J., Madden, G., Houlihan, J., Huyet, G., Viktorov, E. A., Erneux, T., & Mandel, P. (2009). Ultrafast Processes in InAs/GaAs Quantum Dot Based Electro-Absorbers. In ICTON 2009: 11th International Conference on Transparent Optical Networks Article 5185002 (ICTON 2009: 11th International Conference on Transparent Optical Networks). https://doi.org/10.1109/ICTON.2009.5185002

@inproceedings{aef8b1a8ff8746e9879e08295dcad235,

title = "Ultrafast Processes in InAs/GaAs Quantum Dot Based Electro-Absorbers",

abstract = "In this study we perform a detailed investigation of the ultrafast processes which govern the intradot recovery dynamics of a QD InAs/GaAs structure under reverse bias condition by means of the Single and Two Colour Pump-Probe technique. By studying the GS and ES recoveries as a function of reverse bias voltage and fitting the experimental results with a simple rate equation model for the intradot carrier dynamics we have illustrated the dominance of Auger mediated recovery when the ES is initially populated while phonon mediated recovery dominates for the GS case. This provides opportunities for the design of the next generation of electro-absorbing devices based on QD materials.",

keywords = "Absorption recovery dynamics, Pump-probe spectroscopy, Quantum dot, Semiconductor electro-absorbers",

author = "T. Piwonski and J. Pulka and G. Madden and J. Houlihan and G. Huyet and Viktorov, {E. A.} and T. Erneux and P. Mandel",

year = "2009",

doi = "10.1109/ICTON.2009.5185002",

language = "English",

isbn = "9781424448265",

series = "ICTON 2009: 11th International Conference on Transparent Optical Networks",

booktitle = "ICTON 2009",

note = "ICTON 2009: 11th International Conference on Transparent Optical Networks ; Conference date: 28-06-2009 Through 02-07-2009",

}

Piwonski, T, Pulka, J, Madden, G, Houlihan, J, Huyet, G, Viktorov, EA, Erneux, T & Mandel, P 2009, Ultrafast Processes in InAs/GaAs Quantum Dot Based Electro-Absorbers. in ICTON 2009: 11th International Conference on Transparent Optical Networks., 5185002, ICTON 2009: 11th International Conference on Transparent Optical Networks, ICTON 2009: 11th International Conference on Transparent Optical Networks, Ponta Delgada, Portugal, 28/06/2009. https://doi.org/10.1109/ICTON.2009.5185002

Ultrafast Processes in InAs/GaAs Quantum Dot Based Electro-Absorbers. / Piwonski, T.; Pulka, J.; Madden, G. et al.
ICTON 2009: 11th International Conference on Transparent Optical Networks. 2009. 5185002 (ICTON 2009: 11th International Conference on Transparent Optical Networks).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultrafast Processes in InAs/GaAs Quantum Dot Based Electro-Absorbers

AU - Piwonski, T.

AU - Pulka, J.

AU - Madden, G.

AU - Houlihan, J.

AU - Huyet, G.

AU - Viktorov, E. A.

AU - Erneux, T.

AU - Mandel, P.

PY - 2009

Y1 - 2009

N2 - In this study we perform a detailed investigation of the ultrafast processes which govern the intradot recovery dynamics of a QD InAs/GaAs structure under reverse bias condition by means of the Single and Two Colour Pump-Probe technique. By studying the GS and ES recoveries as a function of reverse bias voltage and fitting the experimental results with a simple rate equation model for the intradot carrier dynamics we have illustrated the dominance of Auger mediated recovery when the ES is initially populated while phonon mediated recovery dominates for the GS case. This provides opportunities for the design of the next generation of electro-absorbing devices based on QD materials.

AB - In this study we perform a detailed investigation of the ultrafast processes which govern the intradot recovery dynamics of a QD InAs/GaAs structure under reverse bias condition by means of the Single and Two Colour Pump-Probe technique. By studying the GS and ES recoveries as a function of reverse bias voltage and fitting the experimental results with a simple rate equation model for the intradot carrier dynamics we have illustrated the dominance of Auger mediated recovery when the ES is initially populated while phonon mediated recovery dominates for the GS case. This provides opportunities for the design of the next generation of electro-absorbing devices based on QD materials.

KW - Absorption recovery dynamics

KW - Pump-probe spectroscopy

KW - Quantum dot

KW - Semiconductor electro-absorbers

UR - http://www.scopus.com/inward/record.url?scp=70449369238&partnerID=8YFLogxK

U2 - 10.1109/ICTON.2009.5185002

DO - 10.1109/ICTON.2009.5185002

M3 - Conference contribution

AN - SCOPUS:70449369238

SN - 9781424448265

T3 - ICTON 2009: 11th International Conference on Transparent Optical Networks

BT - ICTON 2009

T2 - ICTON 2009: 11th International Conference on Transparent Optical Networks

Y2 - 28 June 2009 through 2 July 2009

ER -

Ultrafast Processes in InAs/GaAs Quantum Dot Based Electro-Absorbers

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this